FDP8870
Manufacturer:
On Semiconductor
Mfr.Part #:
FDP8870
Datasheet:
Description:
MOSFETs TO-220AB-3 Through Hole N-Channel number of channels:1 160 W 30 V Continuous Drain Current (ID):156 A 106 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | 30 V |
| Length | 10.67 mm |
| Width | 4.83 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 4.1 MΩ |
| Height | 9.4 mm |
| Packaging | Tube |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 1 |
| Current Rating | 160 A |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 160 W |
| Power Dissipation | 160 W |
| Threshold Voltage | 2.5 V |
| Number of Channels | 1 |
| Input capacitance | 5.2 nF |
| Continuous Drain Current (ID) | 156 A |
| Rds On Max | 4.1 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| FET Type(Transistor Polarity) | N-Channel |
| Turn-On Delay Time | 11 ns |
| Turn-Off Delay Time | 70 ns |
| Element Configuration | Single |
| Fall Time | 46 ns |
| Rise Time | 105 ns |
| Gate Charge | 106 nC |
| Drain to Source Resistance | 4.1 mΩ |
| Nominal Vgs | 2.5 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
Stock: 34
Distributors
pcbx
pcbxUnit Price$2.09722
Ext.Price$2.09722
| Qty | Unit Price | Ext.Price |
|---|---|---|
| 1 | $2.09722 | $2.09722 |
| 10 | $1.79174 | $17.91740 |
| 25 | $1.69384 | $42.34600 |
| 50 | $1.60128 | $80.06400 |
| 100 | $1.42086 | $142.08600 |
| 300 | $1.37506 | $412.51800 |
| 500 | $1.33074 | $665.37000 |
| 1000 | $1.29253 | $1292.53000 |